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      Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

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      Journal of Applied Physics
      AIP Publishing

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          Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

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            Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements

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              Electronic Switching in Phase-Change Memories

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                May 2005
                May 2005
                : 97
                : 9
                : 093509
                Article
                10.1063/1.1884248
                12dca53c-9198-4e17-a2b3-f00fa313fafd
                © 2005
                History

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