AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch

Fullowan, T. R.

doi:10.1116/1.585448

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AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch

Author(s): T. R. Fullowan

Publication date (Print): May 1991

Journal: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Publisher: American Vacuum Society

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Journal ID (publisher-id): JVTBD9

Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Abbreviated Title: J. Vac. Sci. Technol. B

Publisher: American Vacuum Society

ISSN (Print): 0734211X

Publication date (Print): May 1991

Volume: 9

Issue: 3

Page: 1445

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DOI: 10.1116/1.585448

SO-VID: 178fe883-b041-4180-a22c-2d85dfaf2232

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AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch

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