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      A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN

      Author(s): , , ,
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

          B. Heying, J. S. Speck, E Haus … (2000)
          Article 0 comments Cited 131 times – based on 0 reviews     Review now
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            Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

            E. Tarsa, B. Heying, X H Wu … (1997)
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              Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

              Sarah Kurtz, W Walukiewicz, K. M. Yu … (2003)
              Article 0 comments Cited 108 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: September 15 2007
                Publication date (Print): September 15 2007
                Volume: 102
                Issue: 6
                Page: 064907
                Article
                DOI: 10.1063/1.2781319
                SO-VID: 2e34801e-2733-4a26-8a4a-2042f6fef099
                Copyright © © 2007
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