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Improved electrical performance thanks to Sb and N Doping in Se-rich GeSe-Based OTS selector devices
Author(s):
Anthonin Verdy
,
Gabriele Navarro
,
Veronique Sousa
,
Pierre Noé
,
Mathieu Bernard
,
Frederique Fillot
,
Guillaume Bourgeois
,
Julien Garrione
,
Luca Perniola
Publication date:
2017
Journal:
2017 IEEE 9th Int. Mem. Work. IMW
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Scientific Phone Apps and Mobile Devices
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DOI::
10.1109/IMW.2017.7939088
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