Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

doi:10.1109/LED.2015.2512279

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Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

Author(s): Man Hoi Wong , Kohei Sasaki , Akito Kuramata , Shigenobu Yamakoshi , Masataka Higashiwaki

Publication date (Print): February 2016

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Kohei Sasaki, Takekazu Masui, Shigenobu Yamakoshi … (2012)

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Deep-ultraviolet transparent conductive β-Ga2O3 thin films

Masahiro Orita, Hiromichi Ohta, Masahiro Hirano … (2000)

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Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

H. H. Tippins (1965)

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Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

ISSN (Electronic): 1558-0563

Publication date Created: February 2016

Publication date (Print): February 2016

Volume: 37

Issue: 2

Pages: 212-215

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DOI: 10.1109/LED.2015.2512279

SO-VID: 41f5b3ab-463d-40a5-b10d-655c45e5d94d

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Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

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Most cited references 11

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Deep-ultraviolet transparent conductive β-Ga2O3 thin films

Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

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