Self-powered flexible and transparent photovoltaic detectors based on CdSe nanobelt/graphene Schottky junctions.

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Abstract

Flexible and transparent electronic and optoelectronic devices have attracted more and more research interest due to their potential applications in developing portable, wearable, low-cost, and implantable devices. We have fabricated and studied high-performance flexible and transparent CdSe nanobelt (NB)/graphene Schottky junction self-powered photovoltaic detectors for the first time. Under 633 nm light illumination, typical photosensitivity and responsivity of the devices are about 1.2 × 10(5) and 8.7 A W(-1), respectively. Under 3500 Hz switching frequency, the response and recovery times of them are about 70 and 137 μs, respectively, which, to the best of our knowledge, are the best reported values for nanomaterial based Schottky junction photodetectors up to date. The detailed properties of the photodetectors, such as the influences of incident light wavelength and light intensity on the external quantum efficiency and speed, are also investigated. Detailed discussions are made in order to understand the observed phenomena. Our work demonstrates that the self-powered flexible and transparent CdSe NB/graphene Schottky junction photovoltaic detectors have a bright application prospect.

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Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers.

Stefan Mannsfeld, Benjamin Tee, Randall M Stoltenberg … (2010)

The development of an electronic skin is critical to the realization of artificial intelligence that comes into direct contact with humans, and to biomedical applications such as prosthetic skin. To mimic the tactile sensing properties of natural skin, large arrays of pixel pressure sensors on a flexible and stretchable substrate are required. We demonstrate flexible, capacitive pressure sensors with unprecedented sensitivity and very short response times that can be inexpensively fabricated over large areas by microstructuring of thin films of the biocompatible elastomer polydimethylsiloxane. The pressure sensitivity of the microstructured films far surpassed that exhibited by unstructured elastomeric films of similar thickness, and is tunable by using different microstructures. The microstructured films were integrated into organic field-effect transistors as the dielectric layer, forming a new type of active sensor device with similarly excellent sensitivity and response times.

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Transfer of large-area graphene films for high-performance transparent conductive electrodes.

Xuesong Li, Yanwu Zhu, Weiwei W. Cai … (2009)

Graphene, a two-dimensional monolayer of sp(2)-bonded carbon atoms, has been attracting great interest due to its unique transport properties. One of the promising applications of graphene is as a transparent conductive electrode owing to its high optical transmittance and conductivity. In this paper, we report on an improved transfer process of large-area graphene grown on Cu foils by chemical vapor deposition. The transferred graphene films have high electrical conductivity and high optical transmittance that make them suitable for transparent conductive electrode applications. The improved transfer processes will also be of great value for the fabrication of electronic devices such as field effect transistor and bilayer pseudospin field effect transistor devices.

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C Soci, A Zhang, B Xiang … (2007)

ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.