Spin-orbit torque-driven magnetization switching and thermal effects
  studied in Ta\CoFeB\MgO nanowires

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Abstract

We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We deduce that an effective torque arising from spin-orbit effects in the multilayer drives the switching mechanism. While the generation of a component of the magnetization along the current direction is crucial for the switching to occur, we observe that even without a longitudinal field thermally generated magnetization fluctuations can lead to switching. Analysis using a generalized N\'eel-Brown model enables key parameters of the thermally induced spin-orbit torques switching process to be estimated, such as the attempt frequency and the effective energy barrier.

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Magnetic domain-wall racetrack memory.

Stuart S P Parkin, Masamitsu Hayashi, Luc Thomas (2008)

Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.

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Spin torque switching with the giant spin Hall effect of tantalum

R A Buhrman, D C Ralph, H Tseng … (2012)

We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.