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      Impact of temperature and interface trapped charges variation on the Analog/RF and linearity of vertically extended drain double gate Si0.5Ge0.5 source tunnel FET

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      Microelectronics Journal
      Elsevier BV

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          Tunnel field-effect transistors as energy-efficient electronic switches.

          Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits. © 2011 Macmillan Publishers Limited. All rights reserved
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            Emission probability of hot electrons from silicon into silicon dioxide

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              The future of computing beyond Moore’s Law

              John Shalf (2020)
              Moore’s Law is a techno-economic model that has enabled the information technology industry to double the performance and functionality of digital electronics roughly every 2 years within a fixed cost, power and area. Advances in silicon lithography have enabled this exponential miniaturization of electronics, but, as transistors reach atomic scale and fabrication costs continue to rise, the classical technological driver that has underpinned Moore’s Law for 50 years is failing and is anticipated to flatten by 2025. This article provides an updated view of what a post-exascale system will look like and the challenges ahead, based on our most recent understanding of technology roadmaps. It also discusses the tapering of historical improvements, and how it affects options available to continue scaling of successors to the first exascale machine. Lastly, this article covers the many different opportunities and strategies available to continue computing performance improvements in the absence of historical technology drivers. This article is part of a discussion meeting issue ‘Numerical algorithms for high-performance computational science’.
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                Author and article information

                Journal
                Microelectronics Journal
                Microelectronics Journal
                Elsevier BV
                00262692
                July 2021
                July 2021
                : 113
                : 105077
                Article
                10.1016/j.mejo.2021.105077
                57c24652-3b1c-47d7-970d-492145f06c24
                © 2021

                https://www.elsevier.com/tdm/userlicense/1.0/

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