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      Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

      Author(s): , , ,
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          The Stopping and Range of Ions in Matter

          James Ziegler, Jochen Biersack (1985)
          Article 0 comments Cited 231 times – based on 0 reviews
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            Electron transport at metal-semiconductor interfaces: General theory

            R. T. Tung (1992)
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              Deep level defects in electron-irradiated 4H SiC epitaxial layers

              S. Savage, N. Nordell, C. Hemmingsson … (1997)
              Article 0 comments Cited 77 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: June 14 2014
                Publication date (Print): June 14 2014
                Volume: 115
                Issue: 22
                Page: 224504
                Article
                DOI: 10.1063/1.4883317
                SO-VID: 59c234a1-0588-4930-84c9-ba2b70a11579
                Copyright © © 2014
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