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      InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop

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      Applied Physics Letters
      AIP Publishing

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          Auger recombination in InGaN measured by photoluminescence

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            Origin of efficiency droop in GaN-based light-emitting diodes

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              Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A∕cm[sup 2]

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                July 05 2010
                July 05 2010
                : 97
                : 1
                : 011103
                Article
                10.1063/1.3460921
                64b22564-dbcf-4a02-8867-0b5d29bcab2f
                © 2010
                History

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