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      Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

      Author(s): , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

          Hisashi Seki, Akinori Koukitu, Yoshinao Kumagai … (2001)
          Article 0 comments Cited 46 times – based on 0 reviews     Review now
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            High performance AlGaInP visible light‐emitting diodes

            C. Kuo, V. M. Robbins, M. G. Craford … (1990)
            Article 0 comments Cited 43 times – based on 0 reviews     Review now
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              Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

              Naoki Kobayashi, Toshio Nishida, Hisao Saito (2001)
              Article 0 comments Cited 26 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: August 06 2001
                Publication date (Print): August 06 2001
                Volume: 79
                Issue: 6
                Pages: 711-712
                Article
                DOI: 10.1063/1.1390485
                SO-VID: 65736605-19e5-43a8-928a-677220959398
                Copyright © © 2001
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