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      TMD-based highly efficient electrocatalysts developed by combined computational and experimental approaches

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          Abstract

          A thorough review on combined computational and experimental approaches to develop TMD-based highly efficient electrocatalysts by site doping, phase modulation, control of growth morphology and construction of heterostructures.

          Abstract

          As a large family of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have been attracting an increasing level of attention and therefore considerable research input, owing to their intriguing catalytic, chemical and physical properties. The high exposed surface area, potentially large number of active sites, and chemical stability provide TMDs with vast opportunities for use as a unique class of electrocatalysts, while their low electrical conductivity and other deficiencies have drawn considerable research efforts for further modification. The optimization of TMDs can be achieved by several approaches, including site doping/modification, phase modulation, control of growth morphology and construction of heterostructures, by both appropriate computational simulations and purposely designed experimental studies. In tuning the TMD-based electrocatalysts, computational calculations have played uniquely important roles in predicting the structure and understanding the operational mechanism of catalytic performance. Indeed, the importance of refined calculations has been growing rapidly to provide comprehensive and unique guidance towards further modification of the existing TMD-based electrocatalysts and the discovery of new ones. In this critical review, we will look into the rapid advancement of the highly efficient TMD-based electrocatalysts that have been developed in recent years, achieved by combined computational and experimental approaches. Aiming to provide a generalized overall picture, we have conducted further computational studies as a systematic approach to unveil the modulation in the structure and the improvement in electrocatalytic properties brought in by appropriate element doping/modification in either basal plane A-(metal atoms) and B-(chalcogen atoms) sites or edge sites of the 2D TMD materials, as well as in some of those non-layered metal disulfides/diselenides. This review is concluded by summarizing the likely future development and perspectives of TMD-based electrocatalysts.

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          Most cited references109

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          A perovskite oxide optimized for oxygen evolution catalysis from molecular orbital principles.

          The efficiency of many energy storage technologies, such as rechargeable metal-air batteries and hydrogen production from water splitting, is limited by the slow kinetics of the oxygen evolution reaction (OER). We found that Ba(0.5)Sr(0.5)Co(0.8)Fe(0.2)O(3-δ) (BSCF) catalyzes the OER with intrinsic activity that is at least an order of magnitude higher than that of the state-of-the-art iridium oxide catalyst in alkaline media. The high activity of BSCF was predicted from a design principle established by systematic examination of more than 10 transition metal oxides, which showed that the intrinsic OER activity exhibits a volcano-shaped dependence on the occupancy of the 3d electron with an e(g) symmetry of surface transition metal cations in an oxide. The peak OER activity was predicted to be at an e(g) occupancy close to unity, with high covalency of transition metal-oxygen bonds.
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            Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

            Ultrathin molybdenum disulphide (MoS2) has emerged as an interesting layered semiconductor because of its finite energy bandgap and the absence of dangling bonds. However, metals deposited on the semiconducting 2H phase usually form high-resistance (0.7 kΩ μm-10 kΩ μm) contacts, leading to Schottky-limited transport. In this study, we demonstrate that the metallic 1T phase of MoS2 can be locally induced on semiconducting 2H phase nanosheets, thus decreasing contact resistances to 200-300 Ω μm at zero gate bias. Field-effect transistors (FETs) with 1T phase electrodes fabricated and tested in air exhibit mobility values of ~50 cm(2) V(-1) s(-1), subthreshold swing values below 100 mV per decade, on/off ratios of >10(7), drive currents approaching ~100 μA μm(-1), and excellent current saturation. The deposition of different metals has limited influence on the FET performance, suggesting that the 1T/2H interface controls carrier injection into the channel. An increased reproducibility of the electrical characteristics is also obtained with our strategy based on phase engineering of MoS2.
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              Triggering the electrocatalytic hydrogen evolution activity of the inert two-dimensional MoS2surface via single-atom metal doping

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                Author and article information

                Journal
                CSRVBR
                Chemical Society Reviews
                Chem. Soc. Rev.
                Royal Society of Chemistry (RSC)
                0306-0012
                1460-4744
                2018
                2018
                : 47
                : 12
                : 4332-4356
                Affiliations
                [1 ]Department of Material Science and Engineering
                [2 ]National University of Singapore
                [3 ]Singapore
                [4 ]Key Laboratory for Magnetism and Magnetic Materials of MOE
                [5 ]Key Laboratory of Special Function Materials and Structure Design of MOE
                [6 ]School of Physical and Mathematical Science
                [7 ]Nanyang Technological University
                Article
                10.1039/C7CS00705A
                29725691
                72b3549f-b3a4-42ea-87bb-fe4480e65c54
                © 2018

                http://rsc.li/journals-terms-of-use

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