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Electron channelling contrast imaging of interfacial defects in strained silicon-germanium layers on silicon

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      Most cited references 16

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      Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

       R. People (1986)
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        A Kinematical Theory of Diffraction Contrast of Electron Transmission Microscope Images of Dislocations and other Defects

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          Dislocation nucleation near the critical thickness in GeSi/Si strained layers

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            Author and article information

            Journal
            Philosophical Magazine A
            Philosophical Magazine A
            Informa UK Limited
            0141-8610
            1460-6992
            July 1993
            July 1993
            : 68
            : 1
            : 59-80
            10.1080/01418619308219357
            © 1993

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