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      Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy

      Author(s): , , ,
      Publication date (Electronic):
      Journal: Semiconductor Science and Technology
      Publisher: IOP Publishing

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          Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

          W. Wiegmann, A C Gossard, H L Stormer … (1978)
          Article 0 comments Cited 410 times – based on 0 reviews     Review now
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            Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

            Kohei Sasaki, Takekazu Masui, Shigenobu Yamakoshi … (2012)
            Article 0 comments Cited 259 times – based on 0 reviews     Review now
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              Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

              H. H. Tippins (1965)
              Article 0 comments Cited 182 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Semiconductor Science and Technology
                Abbreviated Title: Semicond. Sci. Technol.
                Publisher: IOP Publishing
                ISSN (Print): 0268-1242
                ISSN (Electronic): 1361-6641
                Publication date Created: March 01 2017
                Publication date (Print): March 01 2017
                Publication date (Electronic): January 30 2017
                Volume: 32
                Issue: 3
                Page: 035004
                Article
                DOI: 10.1088/1361-6641/aa53a7
                SO-VID: 7ac8e949-8921-4b37-855d-1a19ed446df8
                Copyright © © 2017
                License:

                http://iopscience.iop.org/info/page/text-and-data-mining

                http://iopscience.iop.org/page/copyright

                http://creativecommons.org/licenses/by-nc-nd/3.0

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