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      High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

      , , , , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

          Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material--namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)--for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V(-1) s(-1), which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9 cm2 V(-1) s(-1), and device characteristics are stable during repetitive bending of the TTFT sheet.
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            ZnO-based transparent thin-film transistors

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              Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                September 11 2006
                September 11 2006
                : 89
                : 11
                : 112123
                Article
                10.1063/1.2353811
                7b997091-1b84-4ad0-87dd-e90f769fec10
                © 2006
                History

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