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      Photoinduced modulation and relaxation characteristics in LaAlO 3/SrTiO 3 heterointerface

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      Author(s): a , 1 , 2 , 1 , 2
      Publication date (Electronic):
      Journal: Scientific Reports
      Publisher: Nature Publishing Group

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          Abstract

          We report the modulation and relaxation characteristics in the two-dimensional electron gas system at LaAlO 3/SrTiO 3 heterointerface induced by the ultraviolet light illumination (365 nm). The suppression of Kondo effect at the interface illuminated by the light originates from the light irradiation-induced decoherence effect of localized states. It is interesting to note that the persistent and transient photoinduced effects are simultaneously observed and the photoinduced maximum change values in resistance are 80.8% and 51.4% at T = 20 K, respectively. Moreover, the photoinduced relaxation processes after the irradiation are systematically analyzed using the double exponential model. These results provide the deeper understanding of the photoinduced effect and the experimental evidence of tunable Kondo effect in oxides-based two-dimensional electron gas systems.

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          Magnetic effects at the interface between nonmagnetic oxides

          G Rijnders, W. van der Wiel, U Zeitler … (2007)
          The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, the Kondo effect, and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise nonmagnetic materials.
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            Electric field control of the LaAlO3/SrTiO3 interface ground state.

            A Caviglia, S Gariglio, N. Reyren … (2008)
            Interfaces between complex oxides are emerging as one of the most interesting systems in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of new and unusual electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the charge carrier density in determining the systems' ground states. A particularly fascinating system is the conducting interface between the band insulators LaAlO(3) and SrTiO(3) (ref. 3). Recently two possible ground states have been experimentally identified: a magnetic state and a two-dimensional superconducting condensate. Here we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition between a two-dimensional superconducting state and an insulating state. Analyses of the magnetotransport properties in the insulating state are consistent with weak localization and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of new mesoscopic superconducting circuits.
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              Oxide nanoelectronics on demand.

              Jeremy Levy, Jochen Mannhart, Cheng Cen … (2009)
              Electronic confinement at nanoscale dimensions remains a central means of science and technology. We demonstrate nanoscale lateral confinement of a quasi-two-dimensional electron gas at a lanthanum aluminate-strontium titanate interface. Control of this confinement using an atomic force microscope lithography technique enabled us to create tunnel junctions and field-effect transistors with characteristic dimensions as small as 2 nanometers. These electronic devices can be modified or erased without the need for complex lithographic procedures. Our on-demand nanoelectronics fabrication platform has the potential for widespread technological application.
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                Author and article information

                Journal
                Journal ID (nlm-ta): Sci Rep
                Journal ID (iso-abbrev): Sci Rep
                Title: Scientific Reports
                Publisher: Nature Publishing Group
                ISSN (Electronic): 2045-2322
                Publication date (Electronic): 05 March 2015
                Publication date Collection: 2015
                Volume: 5
                Electronic Location Identifier: 8778
                Affiliations
                [1 ]Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University , Xi'an 710072, China
                [2 ]Materials Sciences and Engineering, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
                Author notes
                Article
                Publisher Item ID: srep08778
                DOI: 10.1038/srep08778
                PMC ID: 4350088
                PubMed ID: 25739889
                SO-VID: 8293fb71-739c-4a55-8ccd-784fe117d6d5
                Copyright © Copyright © 2015, Macmillan Publishers Limited. All rights reserved
                License:

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                Date received : 11 November 2014
                Date accepted : 03 February 2015
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