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      Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy

      , , ,
      Physical Review B
      American Physical Society (APS)

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          Electronic structure, total energies, and abundances of the elementary point defedts in GaAs.

          (1985)
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            Native defects in gallium arsenide

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              Irradiation-induced defects in GaAs

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                1095-3795
                November 1991
                November 15 1991
                : 44
                : 19
                : 10585-10600
                Article
                10.1103/PhysRevB.44.10585
                91d1131a-5233-426c-9166-32008658293a
                © 1991

                http://link.aps.org/licenses/aps-default-license

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