Fabricating 3D Structures by Combining 2D Printing and Relaxation of Strain

Nanoelectromechanical systems were fabricated from single- and multilayer graphene sheets by mechanically exfoliating thin sheets from graphite over trenches in silicon oxide. Vibrations with fundamental resonant frequencies in the megahertz range are actuated either optically or electrically and detected optically by interferometry. We demonstrate room-temperature charge sensitivities down to 8 x 10(-4) electrons per root hertz. The thinnest resonator consists of a single suspended layer of atoms and represents the ultimate limit of two-dimensional nanoelectromechanical systems.

Shape-morphing systems can be found in many areas, including smart textiles, autonomous robotics, biomedical devices, drug delivery and tissue engineering. The natural analogues of such systems are exemplified by nastic plant motions, where a variety of organs such as tendrils, bracts, leaves and flowers respond to environmental stimuli (such as humidity, light or touch) by varying internal turgor, which leads to dynamic conformations governed by the tissue composition and microstructural anisotropy of cell walls. Inspired by these botanical systems, we printed composite hydrogel architectures that are encoded with localized, anisotropic swelling behaviour controlled by the alignment of cellulose fibrils along prescribed four-dimensional printing pathways. When combined with a minimal theoretical framework that allows us to solve the inverse problem of designing the alignment patterns for prescribed target shapes, we can programmably fabricate plant-inspired architectures that change shape on immersion in water, yielding complex three-dimensional morphologies.

We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this "wavy" silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding substantial strains in the silicon itself. Dielectrics, patterns of dopants, electrodes, and other elements directly integrated with the silicon yield fully formed, high-performance "wavy" metal oxide semiconductor field-effect transistors, p-n diodes, and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.