ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
17
views
74
references
Top references
cited by
60
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
1,061
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Author(s):
Seiichi Iwata
,
Akitoshi Ishizaka
Publication date
Created:
May 01 1996
Publication date
(Print):
May 01 1996
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
Read this article at
ScienceOpen
Publisher
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Core Readings in Statistical Mediation Analysis
Most cited references
74
Record
: found
Abstract
: not found
Article
: not found
Microscopic structure of theSiO2/Si interface
F. McFeely
,
F Himpsel
,
G. Hollinger
…
(1988)
0
comments
Cited
370
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
Optical properties of non-crystalline Si, SiO, SiOx and SiO2
H.R. Philipp
(1971)
0
comments
Cited
140
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
Dielectric breakdown in electrically stressed thin films of thermal SiO2
Eli Harari
(1978)
0
comments
Cited
136
times
– based on
0
reviews
Review now
Bookmark
All references
Author and article information
Journal
Journal ID (publisher-id):
JAPIAU
Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
May 01 1996
Publication date (Print):
May 01 1996
Volume
: 79
Issue
: 9
Pages
: 6653-6713
Article
DOI:
10.1063/1.362676
SO-VID:
9da7442a-339f-4a69-88e8-4974ea24e3c9
Copyright ©
© 1996
History
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
1,061
Invenções de Si em Histórias de Amor: Lota & Bishop
Authors:
Nadia Nogueira
GWΓ approximation for electron self-energies in semiconductors and insulators
Authors:
R. Godby
,
R. Del Sole
,
Lucia Reining
Semiconductors as Effective Electrodes for Dye Sensitized Solar Cell Applications
Authors:
Marwa Moharam
,
Ayat Nasr El Shazly
,
Kabali Vijai Anand
…
See all similar
Cited by
60
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
Authors:
E. L. Garfunkel
,
R. Degraeve
,
E. P. Gusev
…
Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces
Authors:
Tsuyoshi Uda
,
Koichi Kato
,
Kiyoyuki Terakura
…
Chemical structure of the ultrathin\({\mathrm{SiO}}_{2}/\mathrm{S}\mathrm{i}\left(100\right)\mathrm{}\)interface: An angle-resolved Si\(2p\)photoemission study
Authors:
Y. Hagimoto
,
A Kakizaki
,
A. Toriumi
…
See all cited by
Most referenced authors
606
X Wang
Y. Wu
H. Wu
See all reference authors