Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition

Arakawa, Y.; Oshinowo, J.; Nishioka, M.; Ishida, S

doi:10.1063/1.112070

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Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition

Author(s): J. Oshinowo , M. Nishioka , S. Ishida , Y. Arakawa

Publication date Created: September 12 1994

Publication date (Print): September 12 1994

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

K. C. Rajkumar, A Madhukar, S Guha (1990)

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Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

P. Petroff, J. English, G. Dolan … (1986)

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Effect of strain on surface morphology in highly strained InGaAs films

B G Orr, L Sander, D. Kessler … (1991)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: September 12 1994

Publication date (Print): September 12 1994

Volume: 65

Issue: 11

Pages: 1421-1423

Article

DOI: 10.1063/1.112070

SO-VID: b06eed89-6290-490b-b179-6aff9d6b1311

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Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition

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UCL: UN SDG 15 Life on Land

Most cited references 9

Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

Effect of strain on surface morphology in highly strained InGaAs films

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