Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs

Wood, C. D.; Hatem, Osama; Cunningham, J.; Moodie, D. G.; Linfield, Edmund; Davies, A G; Cannard, P. J.; Robertson, M J

doi:10.1063/1.3571289

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Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs

Author(s): O. Hatem , J. Cunningham , E. H. Linfield , C. D. Wood , A. G. Davies , P. J. Cannard , M. J. Robertson , D. G. Moodie

Publication date Created: March 21 2011

Publication date (Print): March 21 2011

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Most cited references 12

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Subpicosecond photoconducting dipole antennas

P.R. Smith, D.H. Auston, M.C. Nuss (1988)

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Ultrabroadband terahertz radiation from low-temperature-grown GaAs photoconductive emitters

A G Davies, H. Beere, Y. C. Shen … (2003)

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Fe-implanted InGaAs terahertz emitters for 1.56μm wavelength excitation

Masayoshi Tonouchi, Masato Suzuki (2005)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: March 21 2011

Publication date (Print): March 21 2011

Volume: 98

Issue: 12

Page: 121107

Article

DOI: 10.1063/1.3571289

SO-VID: ef237daa-754f-4d00-97f4-d6c2ca456501

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Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs

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Most cited references 12

Subpicosecond photoconducting dipole antennas

Ultrabroadband terahertz radiation from low-temperature-grown GaAs photoconductive emitters

Fe-implanted InGaAs terahertz emitters for 1.56μm wavelength excitation

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