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      Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs

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          Abstract

          In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable efficient hole injection into p-AlGaN, despite the relatively low work function of Al. Efficient tunneling hole injection was confirmed by light emission at 326 nm with on-wafer peak external quantum efficiency and wall-plug efficiency of 2.65% and 1.55%, respectively. A high power density of 83.7 W/cm2 was measured at 1200 kA/cm2. The metal/semiconductor tunnel junction structure demonstrated here could provide significant advantages for efficient and manufacturable device topologies for high power UV emitters.

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          Most cited references36

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          Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

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            Origin of efficiency droop in GaN-based light-emitting diodes

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              Ultraviolet light-emitting diodes based on group three nitrides

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                Author and article information

                Journal
                19 May 2017
                Article
                10.1063/1.4997328
                1705.08414
                ba02e687-873a-4517-9044-bfd6ad4a636f

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                Custom metadata
                physics.app-ph cond-mat.mes-hall

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