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      Defect Structure and Irradiation Behavior of Noncrystalline SiO2

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      Publication date (Print):
      Journal: IEEE Transactions on Nuclear Science
      Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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          Effects of ionizing radiation on oxidized silicon surfaces and planar devices

          A.S. Grove, E.H. Snow, D.J. Fitzgerald (1967)
          Article 0 comments Cited 103 times – based on 0 reviews     Review now
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            Model for Radiation‐Induced Charge Trapping and Annealing in the Oxide Layer of MOS Devices

            C. W. Gwyn (1969)
            Article 0 comments Cited 51 times – based on 0 reviews     Review now
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              The Role of Hydrogen in SiO[sub 2] Films on Silicon

              A. G. Revesz (1979)
              Article 0 comments Cited 48 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: IEEE Transactions on Nuclear Science
                Abbreviated Title: IEEE Trans. Nucl. Sci.
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0018-9499
                ISSN (Electronic): 1558-1578
                Publication date Created: December 1971
                Publication date (Print): December 1971
                Volume: 18
                Issue: 6
                Pages: 113-116
                Article
                DOI: 10.1109/TNS.1971.4326421
                SO-VID: c0090b4d-4ad5-4acd-9621-01f10ece996f
                Copyright © © 1971
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