High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

Nathan, Arokia; Lee, Czang-Ho; Sazonov, Andrei V.

doi:10.1063/1.1942641

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High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

Author(s): Czang-Ho Lee , Andrei Sazonov , Arokia Nathan

Publication date Created: May 30 2005

Publication date (Print): May 30 2005

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Most cited references 15

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Hydrogenated amorphous silicon

R Street (1991)

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Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma

A Matsuda (1983)

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Intrinsic microcrystalline silicon: A new material for photovoltaics

O Vetterl, F. Finger, R Carius … (2000)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: May 30 2005

Publication date (Print): May 30 2005

Volume: 86

Issue: 22

Page: 222106

Article

DOI: 10.1063/1.1942641

SO-VID: cbad4df8-3167-4ffd-8610-e200db524aab

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High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

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Silicon thin film solar cells

Most cited references 15

Hydrogenated amorphous silicon

Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma

Intrinsic microcrystalline silicon: A new material for photovoltaics

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