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Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature
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Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature
Tom Broekaert, Wai Lee, Clifton G Fonstad (1988)
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Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory
E Brown, T. C. L. G. Sollner, W. D. Goodhue (1988)
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Observation of resonant tunneling through GaAs quantum well states confined by AlAsX‐point barriers
G B Anderson, R. Burnham, T. McGill … (1987)