Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

Kaschel, M.; Schmid, M.; Kasper, E.; Schulze, J.; Oehme, M.; Werner, J.; Schirmer, A

doi:10.1063/1.3555439

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Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

Author(s): J. Werner , M. Oehme , M. Schmid , M. Kaschel , A. Schirmer , E. Kasper , J. Schulze

Publication date Created: February 07 2011

Publication date (Print): February 07 2011

Journal: Applied Physics Letters

Publisher: AIP Publishing

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The Past, Present, and Future of Silicon Photonics

Richard Soref (2006)

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The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy

I.M. Young, P.N.J. Dennis, G.M. Williams … (1981)

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Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

M. Oehme, M Jutzi, M. Berroth … (2005)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: February 07 2011

Publication date (Print): February 07 2011

Volume: 98

Issue: 6

Page: 061108

Article

DOI: 10.1063/1.3555439

SO-VID: d6686834-10c1-40a9-b8f1-5bb01271921b

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Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

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Silicon thin film solar cells

Most cited references 16

The Past, Present, and Future of Silicon Photonics

The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy

Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

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