- Record: found
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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
B. Vincent ,
F. Gencarelli ,
H. Bender ,
C. Merckling ,
B. Douhard ,
D. H. Petersen ,
O. Hansen ,
H. H. Henrichsen ,
J. Meersschaut ,
W. Vandervorst ,
M. Heyns ,
R. Loo ,
M. Caymax
October 10 2011
October 10 2011
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Ge–Sn semiconductors for band-gap and lattice engineering
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TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
A.V.G. Chizmeshya, J. Menendez, J. Kouvetakis (2006)
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Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
M. Kaschel, M. Schmid, E. Kasper … (2011)