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      Fe-implanted InGaAs terahertz emitters for 1.56μm wavelength excitation

      Author(s): ,  
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Concentration dependence of the absorption coefficient forn− andp−type GaAs between 1.3 and 1.6 eV

          K. Wecht, H. C. Casey, D. D. Sell (1975)
          Article 0 comments Cited 193 times – based on 0 reviews     Review now
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            Picosecond GaAs‐based photoconductive optoelectronic detectors

            S. Gupta, M. Frankel, D. R. Dykaar … (1989)
            Article 0 comments Cited 121 times – based on 0 reviews     Review now
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              Stoichiometric disturbances in ion implanted compound semiconductors

              L Christel, J Gibbons (1981)
              Article 0 comments Cited 90 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: January 31 2005
                Publication date (Print): January 31 2005
                Volume: 86
                Issue: 5
                Page: 051104
                Article
                DOI: 10.1063/1.1861495
                SO-VID: d75cc088-e8c3-479e-888f-d44df21365a4
                Copyright © © 2005
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