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      Probing Charge Accumulation at SrMnO 3/SrTiO 3 Heterointerfaces via Advanced Electron Microscopy and Spectroscopy

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          Abstract

          The last three decades have seen a growing trend toward studying the interfacial phenomena in complex oxide heterostructures. Of particular concern is the charge distribution at interfaces, which is a crucial factor in controlling the interface transport behavior. However, the study of the charge distribution is very challenging due to its small length scale and the intricate structure and chemistry at interfaces. Furthermore, the underlying origin of the interfacial charge distribution has been rarely studied in-depth and is still poorly understood. Here, by a combination of aberration-corrected scanning transmission electron microscopy (STEM) and spectroscopy techniques, we identify the charge accumulation in the SrMnO 3 (SMO) side of SrMnO 3/SrTiO 3 heterointerfaces and find that the charge density attains the maximum of 0.13 ± 0.07 e /unit cell (uc) at the first SMO monolayer. Based on quantitative atomic-scale STEM analyses and first-principle calculations, we explore the origin of interfacial charge accumulation in terms of epitaxial strain-favored oxygen vacancies, cationic interdiffusion, interfacial charge transfer, and space-charge effects. This study, therefore, provides a comprehensive description of the charge distribution and related mechanisms at the SMO/STO heterointerfaces, which is beneficial for the functionality manipulation via charge engineering at interfaces.

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          Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides

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            The physics of manganites: Structure and transport

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              A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface.

              Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides--LaAlO3 and SrTiO3--in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V(-1) s(-1). At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.
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                Author and article information

                Journal
                ACS Nano
                ACS Nano
                nn
                ancac3
                ACS Nano
                American Chemical Society
                1936-0851
                1936-086X
                10 September 2020
                27 October 2020
                : 14
                : 10
                : 12697-12707
                Affiliations
                []Max Planck Institute for Solid State Research , 70569 Stuttgart, Germany
                []Institute of Materials Science, Technische Universität Darmstadt , 64287 Darmstadt, Germany
                [§ ]State Key Lab of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics (NUAA) , Nanjing 210016, China
                Author notes
                [* ](H.G.W.) Email: hgwang@ 123456fkf.mpg.de .
                Article
                10.1021/acsnano.0c01545
                7596774
                32910642
                def187fa-1c40-47fc-8bde-96a94ce0cfd4

                This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.

                History
                : 21 February 2020
                : 10 September 2020
                Categories
                Article
                Custom metadata
                nn0c01545
                nn0c01545

                Nanotechnology
                heterointerface,oxygen vacancy,charge density,electron energy-loss spectroscopy,aberration-corrected scanning transmission electron microscopy

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