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      Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

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          Abstract

          Graphene/hexagonal boron nitride ( h‐BN) monolayer in‐plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in‐plane epitaxy of graphene/ h‐BN heterostructure is demonstrated on Cu–Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h‐BN, graphene is found to nucleate at the corners of the as‐formed h‐BN grains, and the high growth rate for graphene minimizes the damage of graphene‐growth process on h‐BN lattice. As a result, high‐quality graphene/ h‐BN in‐plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in‐plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.

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          Most cited references30

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          Electric Field Effect in Atomically Thin Carbon Films

          We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
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            Atomic layers of hybridized boron nitride and graphene domains.

            Two-dimensional materials, such as graphene and monolayer hexagonal BN (h-BN), are attractive for demonstrating fundamental physics in materials and potential applications in next-generation electronics. Atomic sheets containing hybridized bonds involving elements B, N and C over wide compositional ranges could result in new materials with properties complementary to those of graphene and h-BN, enabling a rich variety of electronic structures, properties and applications. Here we report the synthesis and characterization of large-area atomic layers of h-BNC material, consisting of hybridized, randomly distributed domains of h-BN and C phases with compositions ranging from pure BN to pure graphene. Our studies reveal that their structural features and bandgap are distinct from those of graphene, doped graphene and h-BN. This new form of hybrid h-BNC material enables the development of bandgap-engineered applications in electronics and optics and properties that are distinct from those of graphene and h-BN.
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              Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

              Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices. © 2011 American Chemical Society
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                Author and article information

                Contributors
                jlou@rice.edu
                xmxie@mail.sim.ac.cn
                Journal
                Adv Sci (Weinh)
                Adv Sci (Weinh)
                10.1002/(ISSN)2198-3844
                ADVS
                Advanced Science
                John Wiley and Sons Inc. (Hoboken )
                2198-3844
                19 May 2017
                September 2017
                : 4
                : 9 ( doiID: 10.1002/advs.v4.9 )
                : 1700076
                Affiliations
                [ 1 ] State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 P. R. China
                [ 2 ] CAS Center for Excellence in Superconducting Electronics (CENSE) Shanghai 200050 P. R. China
                [ 3 ] Department of Materials Science and NanoEngineering Rice University Houston TX 77005 USA
                [ 4 ] School of Electronic, Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China
                [ 5 ] School of Physics and Electronics Central South University Changsha 410083 P. R. China
                [ 6 ] State Key Laboratory of Molecular Reaction Dynamics Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 P. R. China
                [ 7 ] School of Physical Science and Technology ShanghaiTech University Shanghai 200031 P. R. China
                Author notes
                Article
                ADVS345
                10.1002/advs.201700076
                5604385
                28932666
                e62de766-27db-4968-9495-7dbb5582a9ad
                © 2017 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

                This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

                History
                : 08 February 2017
                : 05 March 2017
                Page count
                Figures: 7, Tables: 0, Pages: 7, Words: 4429
                Funding
                Funded by: National Science and Technology Major Projects of China
                Award ID: 2011ZX02707
                Funded by: External Cooperation Program of the Chinese Academy of Sciences
                Award ID: GJHZ 1306
                Funded by: Strategic Priority Research Program (B) of the Chinese Academy of Sciences
                Award ID: XDB04030000
                Funded by: Science and Technology Commission of Shanghai Municipality
                Award ID: 16ZR1442700
                Funded by: Welch Foundation
                Award ID: C‐1716
                Funded by: Air Force Office of Scientific Research
                Award ID: FA9550‐14‐1‐0268
                Categories
                Communication
                Communications
                Custom metadata
                2.0
                advs345
                September 2017
                Converter:WILEY_ML3GV2_TO_NLMPMC version:5.2.0 mode:remove_FC converted:19.09.2017

                chemical vapor deposition,cu–ni alloy,graphene and h‐bn in‐plane heterostructures,high quality

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