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      Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling

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          Abstract

          Magnetic insulators are a key resource for next-generation spintronic and topological devices. The family of layered metal halides promises varied magnetic states including ultrathin insulating multiferroics, spin liquids, and ferromagnets, but device-oriented characterization methods are needed to unlock their potential. Here, we report tunneling through the layered magnetic insulator CrI3 as a function of temperature and applied magnetic field. We electrically detect the magnetic ground state and inter-layer coupling and observe a field-induced metamagnetic transition. The metamagnetic transition results in magnetoresistances of 95%, 300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers, respectively. We further measure inelastic tunneling spectra for our junctions, unveiling a rich spectrum consistent with collective magnetic excitations (magnons) in CrI3.

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          Most cited references32

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          Is Open Access

          Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials

          Quantum ESPRESSO is an integrated suite of computer codes for electronic-structure calculations and materials modeling, based on density-functional theory, plane waves, and pseudopotentials (norm-conserving, ultrasoft, and projector-augmented wave). Quantum ESPRESSO stands for "opEn Source Package for Research in Electronic Structure, Simulation, and Optimization". It is freely available to researchers around the world under the terms of the GNU General Public License. Quantum ESPRESSO builds upon newly-restructured electronic-structure codes that have been developed and tested by some of the original authors of novel electronic-structure algorithms and applied in the last twenty years by some of the leading materials modeling groups worldwide. Innovation and efficiency are still its main focus, with special attention paid to massively-parallel architectures, and a great effort being devoted to user friendliness. Quantum ESPRESSO is evolving towards a distribution of independent and inter-operable codes in the spirit of an open-source project, where researchers active in the field of electronic-structure calculations are encouraged to participate in the project by contributing their own codes or by implementing their own ideas into existing codes.
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            Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film

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              Is Open Access

              Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3

              Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort, in particular discoveries that spin-orbit interactions in heavy metal/ferromagnet bilayers can yield strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. As part of the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators (TIs), which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron's spin orientation is locked relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the TI Bi_2Se_3 at room temperature can indeed apply a strong spin-transfer torque to an adjacent ferromagnetic permalloy (Py = Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in the Bi_2Se_3 is greater than for any other spin-torque source material measured to date, even for non-ideal TI films wherein the surface states coexist with bulk conduction. Our data suggest that TIs have potential to enable very efficient electrical manipulation of magnetic materials at room temperature for memory and logic applications.
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                Author and article information

                Journal
                Science
                Science
                American Association for the Advancement of Science (AAAS)
                0036-8075
                1095-9203
                June 14 2018
                June 15 2018
                June 15 2018
                May 03 2018
                : 360
                : 6394
                : 1218-1222
                Article
                10.1126/science.aar3617
                29724904
                e82804d0-4746-41a5-841e-a0ba7d5409db
                © 2018

                http://www.sciencemag.org/about/science-licenses-journal-article-reuse

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