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      Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

      Author(s): , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

          G. Martín, A. Rockett, H Morkoç … (1996)
          Article 0 comments Cited 202 times – based on 0 reviews     Review now
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            Origin of Luminescence from InGaN Diodes

            K. O'Donnell, R. W. Martin, P Middleton (1999)
            Article 0 comments Cited 125 times – based on 0 reviews     Review now
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              Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

              Y. Samson, G. Feuillet, F. Widmann … (1997)
              Article 0 comments Cited 85 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: March 20 2000
                Publication date (Print): March 20 2000
                Volume: 76
                Issue: 12
                Pages: 1570-1572
                Article
                DOI: 10.1063/1.126098
                SO-VID: f55309fe-e719-4399-b295-0793029a414b
                Copyright © © 2000
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