Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs

Jacobson, D. C.; Williams, J S; Pearton, S J; Hull, R; Poate, J. M.

doi:10.1063/1.96754

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Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs

Author(s): S. J. Pearton , R. Hull , D. C. Jacobson , J. M. Poate , J. S. Williams

Publication date Created: January 06 1986

Publication date (Print): January 06 1986

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor

Satoru Ishida, Yasushi Nanishi, Shintaro Miyazawa … (1983)

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Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors

D.K. Sadana (1985)

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The electrical characteristics of ion implanted compound semiconductors

J.P. Donnelly (1981)

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Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: January 06 1986

Publication date (Print): January 06 1986

Volume: 48

Issue: 1

Pages: 38-40

Article

DOI: 10.1063/1.96754

SO-VID: f6013576-5a77-46c8-808f-85152571b999

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Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs

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Most cited references 12

Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor

Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors

The electrical characteristics of ion implanted compound semiconductors

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