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1,367
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Abstract
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Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization
Author(s):
Hiroshi Oka
1
,
Takashi Amamoto
1
,
Masahiro Koyama
1
,
Yasuhiko Imai
2
,
Shigeru Kimura
2
,
Takuji Hosoi
1
,
Takayoshi Shimura
1
,
Heiji Watanabe
1
Publication date
Created:
January 16 2017
Publication date
(Print):
January 16 2017
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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Digitizing Fabrication
Most cited references
31
Record
: found
Abstract
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Article
: not found
Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
M. V. Fischetti
,
S. E. Laux
(1996)
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Record
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Abstract
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Article
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Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths
,
R. Geiger
,
N. von den Driesch
…
(2015)
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Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
S.M. Sze
,
J.C. Irvin
(1968)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
January 16 2017
Publication date (Print):
January 16 2017
Volume
: 110
Issue
: 3
Page
: 032104
Affiliations
[
1
]
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
[
2
]
Japan Synchrotron Radiation Research Institute (JASRI), Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
Article
DOI:
10.1063/1.4974473
SO-VID:
fa1e81c5-7b54-42b2-97e2-120aa2afe974
Copyright ©
© 2017
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