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      Misfit Dislocation Nucleation and Interactions at GexSi1-x/Si Interfaces

      Author(s): , ,
      Publication date (Electronic):
      Journal: MRS Proceedings
      Publisher: Cambridge University Press (CUP)

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          Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

          J. C. Bean, R. People (1985)
          Article 0 comments Cited 380 times – based on 0 reviews     Review now
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            Defects associated with the accommodation of misfit between crystals

            J. Matthews (1975)
            Article 0 comments Cited 189 times – based on 0 reviews     Review now
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              Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

              T. B. Light, S. Mader, J. Matthews (1970)
              Article 0 comments Cited 170 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): applab
                Title: MRS Proceedings
                Abbreviated Title: MRS Proc.
                Publisher: Cambridge University Press (CUP)
                ISSN (Electronic): 1946-4274
                Publication date Created: January 1989
                Publication date (Electronic): February 28 2011
                Publication date (Print): January 1989
                Volume: 160
                Article
                DOI: 10.1557/PROC-160-65
                SO-VID: 157b552f-71f1-4029-af44-9db772f8370a
                Copyright © © 1989
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