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Nucleation rate and glide velocity of misfit dislocations in Si1−xGex/(100) Si heterostructures
Author(s):
D. C. Houghton
Publication date
Created:
November 12 1990
Publication date
(Print):
November 12 1990
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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17
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Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
T. B. Light
,
S. Mader
,
J. Matthews
(1970)
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Velocities and Densities of Dislocations in Germanium and Other Semiconductor Crystals
A. R. Chaudhuri
,
L G Rubin
,
J R Patel
(1962)
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Dislocation nucleation near the critical thickness in GeSi/Si strained layers
J. C. Bean
,
D. J. Eaglesham
,
E. P. Kvam
…
(2006)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
November 12 1990
Publication date (Print):
November 12 1990
Volume
: 57
Issue
: 20
Pages
: 2124-2126
Article
DOI:
10.1063/1.103918
SO-VID:
61166fad-989d-444f-bfce-6783ba94146b
Copyright ©
© 1990
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