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      Nucleation rate and glide velocity of misfit dislocations in Si1−xGex/(100) Si heterostructures

      Applied Physics Letters
      AIP Publishing

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          Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

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            Velocities and Densities of Dislocations in Germanium and Other Semiconductor Crystals

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              Dislocation nucleation near the critical thickness in GeSi/Si strained layers

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                November 12 1990
                November 12 1990
                : 57
                : 20
                : 2124-2126
                Article
                10.1063/1.103918
                61166fad-989d-444f-bfce-6783ba94146b
                © 1990
                History

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