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      Size effects in MoSi2‐gate MOSFET’s

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective

          S. Zirinsky, B.L. Crowder (1979)
          Article 0 comments Cited 57 times – based on 0 reviews     Review now
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            A New MOS Process Using MoSi2as a Gate Material

            Kazunori Ohuchi, Tomoyasu Inoue, Kenji Shibata … (1978)
            Article 0 comments Cited 31 times – based on 0 reviews     Review now
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              Refractory metal gate processes for VLSI applications

              P.L. Shah (1979)
              Article 0 comments Cited 15 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: February 15 1980
                Publication date (Print): February 15 1980
                Volume: 36
                Issue: 4
                Pages: 297-299
                Article
                DOI: 10.1063/1.91468
                SO-VID: 22810963-96d1-492d-84c7-e33f7cbd8d81
                Copyright © © 1980
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