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      Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

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      Applied Physics Letters
      AIP Publishing

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          InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

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            Semiconductor ultraviolet detectors

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              Emerging gallium nitride based devices

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                June 23 1997
                June 23 1997
                : 70
                : 25
                : 3377-3379
                Article
                10.1063/1.119176
                7035bc2b-d449-4269-8697-a523c0572979
                © 1997
                History

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