n-Type doped transparent conducting binary oxides: an overview

Abstract

A review covering recent developments in computational and experimental study in the n-type doping of binary oxide semiconductors for transparent conducting applications.

Abstract

This article focuses on n-type doped transparent conducting binary oxides – namely, those with the general formula M _xO _y:D, where M _xO _y is the host oxide material and D is the dopant element. Such materials are of great industrial importance in modern materials chemistry. In particular, there is a focus on the search for alternatives to indium-based materials, prompted by indium's problematic supply risk as well as a number of functional factors. The important relationship between computational study and experimental observation is explored, and an extensive comparison is made between the electrical properties of a number of the most interesting experimentally-prepared materials. In writing this article, we aim to provide both an accessible tutorial of the physical descriptions of transparent conducting oxides, and an up-to-date overview of the field, with a brief history, some key accomplishments from the past few decades, the current state of the field as well as postulation on some likely future developments.