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      Oxidation of silicon–germanium alloys. I. An experimental study

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      Journal of Applied Physics
      AIP Publishing

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          General Relationship for the Thermal Oxidation of Silicon

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            Algorithms for the rapid simulation of Rutherford backscattering spectra

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              Heterojunction bipolar transistors using Si-Ge alloys

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                December 1997
                December 1997
                : 82
                : 11
                : 5773-5778
                Article
                10.1063/1.366443
                863f108b-f5c6-4d5c-adf3-9c8f4ef4d02d
                © 1997
                History

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