The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport

Veprek, S; Mareček, V.

doi:10.1016/0038-1101(68)90071-3

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The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport

Author(s): S. Vepřek , V. Mareček

Publication date Created: July 1968

Publication date (Print): July 1968

Journal: Solid-State Electronics

Publisher: Elsevier BV

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Kathodenzerst�ubung

A. G�ntherschulze (1926)

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Hydrogen Plasma Transport of Se As and Te

D. Ing, Y. Chiang, Steven Ing … (1966)

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Journal

Title: Solid-State Electronics

Abbreviated Title: Solid-State Electronics

Publisher: Elsevier BV

ISSN (Print): 00381101

Publication date Created: July 1968

Publication date (Print): July 1968

Volume: 11

Issue: 7

Pages: 683-684

Article

DOI: 10.1016/0038-1101(68)90071-3

SO-VID: 89a03324-fd1b-49ce-9b63-77faa1fe14e8

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http://www.elsevier.com/tdm/userlicense/1.0/

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The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport

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Paul Drude Institute for Solid State Electronics (PDI)

Most cited references 2

Kathodenzerst�ubung

Hydrogen Plasma Transport of Se As and Te

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