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      2D self-assembly and electronic characterization of oxygen–boron–oxygen-doped chiral graphene nanoribbons

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          Abstract

          Chemical vapor deposition synthesis of atomically precise oxygen–boron–oxygen-doped chiral graphene nanoribbons and their well-organized 2D self-assembly.

          Abstract

          Graphene nanoribbons (GNRs), quasi-one-dimensional strips of graphene, exhibit a nonzero bandgap due to quantum confinement and edge effects. In the past decade, different types of GNRs with atomically precise structures have been synthesized by a bottom-up approach and have attracted attention as a novel class of semiconducting materials for applications in electronics and optoelectronics. We report the large-scale, inexpensive growth of high-quality oxygen–boron–oxygen-doped chiral GNRs with a defined structure using chemical vapor deposition. For the first time, a regular 2D self-assembly of such GNRs has been demonstrated, which results in a unique orthogonal network of GNRs. Stable and large-area GNR films with an optical bandgap of ∼1.9 eV were successfully transferred onto insulating substrates. This ordered network structure of semiconducting GNRs holds promise for controlled device integration.

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          Energy Band-Gap Engineering of Graphene Nanoribbons

          We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
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            Electronic structure and stability of semiconducting graphene nanoribbons.

            We present a systematic density functional theory study of the electronic properties, optical spectra, and relative thermodynamic stability of semiconducting graphene nanoribbons. We consider ribbons with different edge nature including bare and hydrogen-terminated ribbons, several crystallographic orientations, and widths up to 3 nm. Our results can be extrapolated to wider ribbons providing a qualitative way of determining the electronic properties of ribbons with widths of practical significance. We predict that in order to produce materials with band gaps similar to Ge or InN, the width of the ribbons must be between 2 and 3 nm. If larger bang gap ribbons are needed (like Si, InP, or GaAs), their width must be reduced to 1-2 nm. According to the extrapolated inverse power law obtained in this work, armchair carbon nanoribbons of widths larger than 8 nm will present a maximum band gap of 0.3 eV, while for ribbons with a width of 80 nm the maximum possible band gap is 0.05 eV. For chiral nanoribbons the band gap oscillations rapidly vanish as a function of the chiral angle indicating that a careful design of their crystallographic nature is an essential ingredient for controlling their electronic properties. Optical excitations show important differences between ribbons with and without hydrogen termination and are found to be sensitive to the carbon nanoribbon width. This should provide a practical way of revealing information on their size and the nature of their edges.
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              Energy Gaps in Graphene Nanoribbons

              Based on a first-principles approach, we present scaling rules for the band gaps of graphene nanoribbons (GNRs) as a function of their widths. The GNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen passivation. Both varieties of ribbons are shown to have band gaps. This differs from the results of simple tight-binding calculations or solutions of the Dirac's equation based on them. Our ab initio calculations show that the origin of energy gaps for GNRs with armchair shaped edges arises from both quantum confinement and the crucial effect of the edges. For GNRs with zigzag shaped edges, gaps appear because of a staggered sublattice potential on the hexagonal lattice due to edge magnetization. The rich gap structure for ribbons with armchair shaped edges is further obtained analytically including edge effects. These results reproduce our ab initio calculation results very well.
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                Author and article information

                Contributors
                Journal
                CHCOFS
                Chemical Communications
                Chem. Commun.
                Royal Society of Chemistry (RSC)
                1359-7345
                1364-548X
                June 17 2021
                2021
                : 57
                : 49
                : 6031-6034
                Affiliations
                [1 ]State Key Laboratory of Silicon Materials
                [2 ]School of Materials Science and Engineering
                [3 ]Zhejiang University
                [4 ]Hangzhou 310027
                [5 ]China
                [6 ]Division of Molecular Imaging and Photonics
                [7 ]Department of Chemistry
                [8 ]KU Leuven Celestijnenlaan
                [9 ]200 F
                [10 ]Leuven B-3001
                [11 ]State Key Laboratory of Elemento-Organic Chemistry
                [12 ]College of Chemistry
                [13 ]Nankai University
                [14 ]Tianjin 300071
                [15 ]Max Planck Institute for Polymer Research
                [16 ]Ackermannweg 10
                [17 ]Mainz D-55128
                [18 ]Germany
                Article
                10.1039/D1CC01901E
                9f0b2a50-5b6c-4845-a359-44c810641159
                © 2021

                http://rsc.li/journals-terms-of-use

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