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      Ion Transport Phenomena in Insulating Films

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      Journal of Applied Physics
      AIP Publishing

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          Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures

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            Review of Germanium Surface Phenomena

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              Simple Physical Model for the Space‐Charge Capacitance of Metal‐Oxide‐Semiconductor Structures

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                May 1965
                May 1965
                : 36
                : 5
                : 1664-1673
                Article
                10.1063/1.1703105
                d0ad8e37-7cc7-41d7-941d-88748b5b99d2
                © 1965
                History

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