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      Defect self-annihilation in surfactant-mediated epitaxial growth

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          Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

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            Surfactants in epitaxial growth.

            (1989)
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              Ion beam crystallography of surfaces and interfaces

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                Author and article information

                Journal
                PRLTAO
                Physical Review Letters
                Phys. Rev. Lett.
                American Physical Society (APS)
                0031-9007
                August 1991
                August 1991
                : 67
                : 9
                : 1130-1133
                Article
                10.1103/PhysRevLett.67.1130
                10045083
                f9961549-1044-483c-8955-6f14d4d22e9f
                © 1991

                http://link.aps.org/licenses/aps-default-license

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