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      Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization

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          Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

          M. V. Fischetti, S. E. Laux (1996)
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            Lasing in direct-bandgap GeSn alloy grown on Si

            S Wirths, R. Geiger, N. von den Driesch … (2015)
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              Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

              S.M. Sze, J.C. Irvin (1968)
              Article 0 comments Cited 141 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: January 16 2017
                Publication date (Print): January 16 2017
                Volume: 110
                Issue: 3
                Page: 032104
                Affiliations
                [1 ]Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
                [2 ]Japan Synchrotron Radiation Research Institute (JASRI), Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
                Article
                DOI: 10.1063/1.4974473
                SO-VID: fa1e81c5-7b54-42b2-97e2-120aa2afe974
                Copyright © © 2017
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