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      Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3

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          Most cited references24

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Large-size β-Ga2O3 single crystals and wafers

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              Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                July 30 2018
                July 30 2018
                : 113
                : 5
                : 052101
                Affiliations
                [1 ]Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814, USA
                [2 ]Department of Physics, University of Idaho, Moscow, Idaho 83844-0903, USA
                [3 ]Center for Materials Research, Washington State University, Pullman, Washington 99164-2711, USA
                [4 ]Lawrence Livermore National Laboratory, Livermore, California 94550, USA
                Article
                10.1063/1.5044627
                64fe3b04-3f78-4b4c-90d2-86d9ce0cd82c
                © 2018

                https://publishing.aip.org/authors/rights-and-permissions

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