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X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

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      Selective epitaxial growth of Ge on nanostructured Si islands on silicon-on-insulator substrates is investigated by X-ray diffraction and transmission electron microscopy to prove the compliance effect between the materials and the structural perfection, especially under the use of a thin SiGe buffer layer.


      On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

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      Author and article information

      [a ]IHP , Im Technologiepark 25, Frankfurt (Oder), 15236, Germany
      [b ]Brandenburgische Technische Universität Cottbus , Konrad-Zuse-Strasse 1, Cottbus, 03046, Germany
      Author notes
      J Appl Crystallogr
      J Appl Crystallogr
      J. Appl. Cryst.
      Journal of Applied Crystallography
      International Union of Crystallography
      01 August 2013
      07 June 2013
      07 June 2013
      : 46
      : Pt 4 ( publisher-idID: j130400 )
      : 868-873
      JACGAR S0021889813003518
      © Peter Zaumseil et al. 2013

      This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.

      X-Ray Diffraction and Imaging


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