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      X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

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          Abstract

          Selective epitaxial growth of Ge on nanostructured Si islands on silicon-on-insulator substrates is investigated by X-ray diffraction and transmission electron microscopy to prove the compliance effect between the materials and the structural perfection, especially under the use of a thin SiGe buffer layer.

          Abstract

          On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

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          Author and article information

          Affiliations
          [a ]IHP , Im Technologiepark 25, Frankfurt (Oder), 15236, Germany
          [b ]Brandenburgische Technische Universität Cottbus , Konrad-Zuse-Strasse 1, Cottbus, 03046, Germany
          Author notes
          Journal
          J Appl Crystallogr
          J Appl Crystallogr
          J. Appl. Cryst.
          Journal of Applied Crystallography
          International Union of Crystallography
          0021-8898
          01 August 2013
          07 June 2013
          07 June 2013
          : 46
          : Pt 4 ( publisher-idID: j130400 )
          : 868-873
          24046490
          3769056
          xz5001
          10.1107/S0021889813003518
          JACGAR S0021889813003518
          © Peter Zaumseil et al. 2013

          This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.

          Categories
          X-Ray Diffraction and Imaging

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