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      Incident light adjustable solar cell by periodic nanolens architecture

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          Abstract

          Could nanostructures act as lenses to focus incident light for efficient utilization of photovoltaics? Is it possible, in order to avoid serious recombination loss, to realize periodic nanostructures in solar cells without direct etching in a light absorbing semiconductor? Here we propose and demonstrate a promising architecture to shape nanolenses on a planar semiconductor. Optically transparent and electrically conductive nanolenses simultaneously provide the optical benefit of modulating the incident light and the electrical advantage of supporting carrier transportation. A transparent indium-tin-oxide (ITO) nanolens was designed to focus the incident light-spectrum in focal lengths overlapping to a strong electric field region for high carrier collection efficiency. The ITO nanolens effectively broadens near-zero reflection and provides high tolerance to the incident light angles. We present a record high light-conversion efficiency of 16.0% for a periodic nanostructured Si solar cell.

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          Most cited references35

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          Coaxial silicon nanowires as solar cells and nanoelectronic power sources.

          Solar cells are attractive candidates for clean and renewable power; with miniaturization, they might also serve as integrated power sources for nanoelectronic systems. The use of nanostructures or nanostructured materials represents a general approach to reduce both cost and size and to improve efficiency in photovoltaics. Nanoparticles, nanorods and nanowires have been used to improve charge collection efficiency in polymer-blend and dye-sensitized solar cells, to demonstrate carrier multiplication, and to enable low-temperature processing of photovoltaic devices. Moreover, recent theoretical studies have indicated that coaxial nanowire structures could improve carrier collection and overall efficiency with respect to single-crystal bulk semiconductors of the same materials. However, solar cells based on hybrid nanoarchitectures suffer from relatively low efficiencies and poor stabilities. In addition, previous studies have not yet addressed their use as photovoltaic power elements in nanoelectronics. Here we report the realization of p-type/intrinsic/n-type (p-i-n) coaxial silicon nanowire solar cells. Under one solar equivalent (1-sun) illumination, the p-i-n silicon nanowire elements yield a maximum power output of up to 200 pW per nanowire device and an apparent energy conversion efficiency of up to 3.4 per cent, with stable and improved efficiencies achievable at high-flux illuminations. Furthermore, we show that individual and interconnected silicon nanowire photovoltaic elements can serve as robust power sources to drive functional nanoelectronic sensors and logic gates. These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.
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            InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit.

            Photovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.
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              Photonic design principles for ultrahigh-efficiency photovoltaics.

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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                05 November 2014
                2014
                : 4
                : 6879
                Affiliations
                [1 ]Department of Electrical Engineering, University at Buffalo, State University of New York , Buffalo, New York 14260, USA
                [2 ]Department of Physics, Ewha Womans University , Seoul 120750, Korea
                [3 ]Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center , Suwon 443270, Korea
                [4 ]Department of Electrical Engineering, Incheon National University , Incheon 406772, Korea
                [5 ]College of Information and Communication Engineering, Sungkyunkwan University , Suwon 440746, Korea
                Author notes
                Article
                srep06879
                10.1038/srep06879
                4220283
                25371099
                ae356239-0754-4bdb-8ff4-3d22ce147650
                Copyright © 2014, Macmillan Publishers Limited. All rights reserved

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 13 May 2014
                : 26 September 2014
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