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Relaxation of strained‐layer semiconductor structures via plastic flow
October 26 1987
October 26 1987
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GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
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Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
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Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
P. Orders, B. F. Usher (1987)