Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)

Feldman, L C; Bean, J. C.; Fiory, A. T.; Robinson, I. K.

doi:10.1063/1.334055

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Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)

Author(s): A. T. Fiory , J. C. Bean , L. C. Feldman , I. K. Robinson

Publication date Created: August 15 1984

Publication date (Print): August 15 1984

Journal: Journal of Applied Physics

Publisher: AIP Publishing

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Lattice Parameter and Density in Germanium-Silicon Alloys1

J. P. Dismukes, L. Ekstrom, R. J. Paff (1964)

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On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates

D. Kuhlmann-Wilsdorf, W. A. Jesser (1967)

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Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy

L Feldman, J. C. Bean, T. T. Sheng … (1984)

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Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: August 15 1984

Publication date (Print): August 15 1984

Volume: 56

Issue: 4

Pages: 1227-1229

Article

DOI: 10.1063/1.334055

SO-VID: 5c0aa1b6-4000-4184-b561-5e6be15081ca

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Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)

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Emerald: Sustainable Structures & Infrastructures

Most cited references 10

Lattice Parameter and Density in Germanium-Silicon Alloys1

On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates

Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy

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